| 摘要 |
A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode (3) formed on a semiconductor substrate (1) through a first insulation layer (2), and a via hole (8) formed in the semiconductor substrate (1) and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole (8) includes a first opening of which a diameter in a portion close to the pad electrode (3) is larger than a diameter y in a portion close to the back surface of the semiconductor substrate (1), and a second opening formed in the first insulation layer (2) and continuing from the first opening, of which a diameter in a portion close to the pad electrode (3) is smaller than a diameter in a portion close to the front surface of the semiconductor substrate. |
