| 发明名称 | Semiconductor devices and methods of fabricating the same | ||
| 摘要 | A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced apart from each other by a first distance, second conductive patterns disposed on the second region and spaced apart from each other by a second distance greater than the first distance, and an interlayer insulating layer disposed between the second conductive patterns and including at least one recess region having a width corresponding to the first distance. | ||
| 申请公布号 | US9406553(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514595662 | 申请日期 | 2015.01.13 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | You Wookyung;Ahn Sanghoon;Rha Sangho;Baek Jongmin;Lee Nae-In |
| 分类号 | H01L21/768;H01L23/522;H01L23/528;H01L23/532;H01L23/485 | 主分类号 | H01L21/768 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. A semiconductor device, comprising: a substrate including a first region and a second region; an interlayer insulating layer disposed on the substrate; first conductive patterns disposed in the interlayer insulating layer of the first region and spaced apart from each other by a first distance; and second conductive patterns disposed in the interlayer insulating layer of the second region and spaced apart from each other by a second distance greater than the first distance, wherein the interlayer insulating layer includes at least one recess region disposed between the second conductive patterns, and the recess region has a width corresponding to the first distance. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||