| 摘要 |
<p>Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, an USG (undoped silicate glass) layer is utilized during a process of forming a capacitor to leave a hard mask layer and a polysilicon layer on the top surface of a peripheral circuit region, and then a plate electrode layer on the peripheral circuit region is removed in a subsequent process to prevent a cut fuse pattern from being oxidized, thereby improving device characteristics and reliability of the semiconductor device.</p> |
