Cascode transistor device and manufacturing method thereof

摘要

A semiconductor device comprises a substrate, a patterned conductive layer, a first transistor structure and a second transistor structure. The patterned conductive layer is formed on the substrate. The first transistor structure includes a first source, a first gate and a first drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The second transistor structure includes a second source, a second gate and a second drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The first gate is electrically connected to the second source through the patterned conductive layer, and the first source is electrically connected to the second drain through the patterned conductive layer.

主权项

1. A semiconductor device, comprising:
a substrate; a patterned conductive layer formed on the substrate and including a first conductive region; a first transistor structure including a first source, a first gate and a first drain and electrically connected to the patterned conductive layer by flip-chip bonding; a second transistor structure including a second source, a second gate and a second drain and electrically connected to the patterned conductive layer by flip-chip bonding; and a connection wire, wherein the first gate is electrically connected to the second source through the patterned conductive layer, and the first source is electrically connected to the second drain through the patterned conductive layer, the first source and the second drain are both electrically connected to the first conductive region, and one end of said connection wire is directly physically contacting and electrically connected to the second drain and another end of said connection wire is directly physically contacting and electrically connected to the first conductive region.