发明名称 Semiconductor device and method of producing the same
摘要 A method of producing a semiconductor device includes the steps of: preparing a double SOI substrate, forming a deep trench, filling the deep trench, forming an opening, forming a cavity, depositing a polycrystalline silicon layer, and forming a bipolar transistor.
申请公布号 US7205587(B2) 申请公布日期 2007.04.17
申请号 US20050191190 申请日期 2005.07.28
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 FUJIMAKI HIROKAZU
分类号 H01L31/00;H01L21/8222 主分类号 H01L31/00
代理机构 代理人
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