| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method capable of executing high-performance LSI processing by suppressing dishing with a less usage quantity of polishing slurry in a chemical mechanical polishing of a film to be processed of a semiconductor device. <P>SOLUTION: The polishing method is characterized in that a polishing pad contacts a surface to be polished of a polishing object so as to relatively move to polish the object while supplying a metal polishing slurry containing polishing particles made of composites of inorganic particles and organic particles on the polishing pad on a polishing platen at a polishing slurry flow rate within a range of 0.035-0.25 ml/min cm<SP>2</SP>. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
