| 摘要 |
PROBLEM TO BE SOLVED: To suppress breaking of a silicide film at a part of a p-n junction in a semiconductor device of a dual-gate structure having the silicide film. SOLUTION: The semiconductor device has the dual-gate structure which has a p-channel field effect transistor formed in a first region 107 of a substrate, and an n-channel field effect transistor formed in a second region 108 of the substrate, and has a polycrystalline silicon film 103, formed continuously over the first region 107 and second region 108 on a substrate 101 and a gate electrode formed of a metal silicide film formed thereupon; and the polycrystalline silicon film 103 has a p-type part 103a, positioned in the first region 107 and an n-type part 103b positioned in the second region 108, in contact with the p-type part 103a and an element which is heavier than p-type impurities determining the conductivity type of the p-type part 103a is further injected into the p-type part 103a. COPYRIGHT: (C)2007,JPO&INPIT
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