| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element having high yield, while enlarging the horizontal spread angle of a far-field pattern of exiting light and decreasing the aspect ratio in the far-field pattern. SOLUTION: The semiconductor laser element has a p-type clad layer 15, an etching stopper layer 16 and a ridge 1 formed sequentially on an active layer 14, wherein the widths of the p-type clad layer 15 and the etching stopper layer 16 are larger than the width of the ridge 1 but is not larger than the width of the active layer 14, and the side faces at least of the p-type clad layer 15 and the etching stopper layer 16 in the length direction are covered with a current block layer 17, having an optical refractive index lower than that of the p-type clad layer 15. COPYRIGHT: (C)2007,JPO&INPIT
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