REMOVAL OF RESIDUES FOR LOW-K DIELECTRIC MATERIALS IN WAFER PROCESSING

摘要

A method of removing post-etch residue from a patterned low-k dielectric layer is disclosed. The low-k dielectric layer preferably comprises a porous silicon oxide-based material with the post-etch residue thereon. The post-etch residue is a polymer, a polymer contaminated with an inorganic material, an anti-reflective coating and/or a combination thereof. In accordance with the method of the invention, the post-etch residue is removed from a patterned low-k dielectric layer using a supercritical cleaning solution comprising supercritical carbon dioxide pyridine-hydrogen fluoride adducts, pyridine, hydrogen fluoride and combination thereof