| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of greatly reducing current consumption even at a high data transmission rate. SOLUTION: This device includes a signal clock generation means for receiving an external signal clock to generate an internal signal clock, a data clock generation means for receiving an external data clock of a frequency higher than that of the external signal clock to generate an internal data clock, a data input/output control means for inputting external data applied in synchronization with the internal signal clock and the internal data clock as internal data or outputting internal data as external data, and a low-speed operation means for executing driving corresponding to an external command and an address in synchronization with the internal signal clock to store or output the internal data. COPYRIGHT: (C)2007,JPO&INPIT
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