发明名称 METHOD FOR FORMING SILICIDE LAYER
摘要 A method for forming a metal silicide over a substrate is provided. The method comprises steps of performing a fluorine-containing plasma treatment on the substrate to remove a plurality of residual over the substrate, wherein the fluorine-containing plasma treatment is performed in a first tool system. Then, a vacuum system of the first tool system is broken. The substrate is transferred from the first tool system into a second tool system. A metal silicide layer is formed over the substrate in the second tool system.
申请公布号 US2007082494(A1) 申请公布日期 2007.04.12
申请号 US20060538061 申请日期 2006.10.03
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN YI-WEI;CHIANG YI-YIING;CHANG YU-LAN;HUNG TZUNG-YU;HSIEH CHAO-CHING
分类号 C23F1/00;B44C1/22;H01L21/311 主分类号 C23F1/00
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