发明名称 |
METHOD FOR FORMING SILICIDE LAYER |
摘要 |
A method for forming a metal silicide over a substrate is provided. The method comprises steps of performing a fluorine-containing plasma treatment on the substrate to remove a plurality of residual over the substrate, wherein the fluorine-containing plasma treatment is performed in a first tool system. Then, a vacuum system of the first tool system is broken. The substrate is transferred from the first tool system into a second tool system. A metal silicide layer is formed over the substrate in the second tool system.
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申请公布号 |
US2007082494(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
US20060538061 |
申请日期 |
2006.10.03 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN YI-WEI;CHIANG YI-YIING;CHANG YU-LAN;HUNG TZUNG-YU;HSIEH CHAO-CHING |
分类号 |
C23F1/00;B44C1/22;H01L21/311 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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