| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a projection mask, a laser machining method, and a laser machining device capable of uniformly crystallizing an object irradiated, and to provide a thin-film transistor element capable of uniforming the electrical characteristic of TFT elements formed on the object irradiated. <P>SOLUTION: In the projection mask 25, a first light-transmitting pattern 25a is formed in a first and a fourth block BA, BD, and a second light-transmitting pattern 25b is formed in a second and a third block BB, BC. In the projection mask 25, the first block BA, the second block BB, the third block BC, and the fourth block BD are arranged, in this order. A laser beam 31 emitted from a light source 21 is irradiated to the projection mask 25, and the laser beam which has passed through the first and the second light-transmitting patterns 25a, 25b is irradiated to a semiconductor film 37. <P>COPYRIGHT: (C)2007,JPO&INPIT |
