发明名称 Systems and methods for programming a memory device
摘要 A multi-Level Cell (MLC) can be used to store, for example, 4 bits per cell by storing two bits on each of two sides. Each side can store, e.g., four different current level states that can be determined by the number of holes injected into, e.g., nitride layer, during programming. As more holes are injected the current decreases for a given voltage. The current can be low, therefore, it can be advantageous in one embodiment to use a current amplifier. The current amplifier can be a BJT, MOS or other type of device.
申请公布号 US2007081390(A1) 申请公布日期 2007.04.12
申请号 US20050248504 申请日期 2005.10.12
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 YEH CHIH C.;TSAI WEN J.;LIAO YI Y.
分类号 G11C16/06;G11C11/34 主分类号 G11C16/06
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