| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wiring substrate for mounting semiconductor which is effective for the high integration of a semiconductor device, high speed, or increase in terminal by multifunction, and the narrow pitch of a distance between terminals, in which the semiconductor device can be mounted with high density and high accuracy specifically on the both surfaces of a substrate, and which is excellent also in reliability, its manufacturing method, and a semiconductor package. <P>SOLUTION: A wiring substrate 5 for mounting semiconductor is a wiring substrate comprising at least an insulating film 1, wiring 2 formed in the insulating film 1, and a plurality of electrode pads 4 conducted by the wiring 2 and a via 3. The electrode pad 4 is prepared on the front and back surfaces of the insulating film 1 such that the front surface is exposed. At least a part of the side surface of the electrode pad is embedded in the insulating film 1. The insulating film 1 can be formed by forming the electrode pads 4 on two sheets of metal plates, laminating the insulating layer and the wiring on the electrode pad 4 and each metal plate, pasting the insulating layer together and unifying the layer, and removing the metal plate. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
