| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method in which, in a substrate having an insulating film, a barrier metal film and a conductive film, a remaining film of the conductive film and the barrier metal film can continuously be polished with the same metal polishing solution, a flatness of a wiring and a projection of the insulating film is good, and scratches can be reduced, and to provide a metal polishing solution for using the same. <P>SOLUTION: The metal polishing solution contains the components (1), (2) and (3), and has the concentration of≤pH 7. The polishing solution is used for polishing a wiring composed of copper or alloy containing copper constituting a semiconductor integrated circuit, and a barrier metal film. The component (1) is particles having a volume average particle size calculated by a dynamic light scattering method in a range of 60-150 nm, the component (2) is particles having the volume average particle size calculated by the dynamic light scattering (DLS) within a range of 10-50 nm, and the component (3) is an oxidant. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
