ARRANGEMENT WITH TWO TRANSISTORS AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a transistor and to a method for producing transistors with different gate oxide thicknesses, during which for doping, the source of the conventional LDD implant, which is introduced after the production of the gate electrode, is replaced by a doping step that is created before the gate stack is applied A doping can be used that is already a component of the conventional process sequence during the production of the transistor.