发明名称 SUB-MOUNT AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a sub-mount in which a rise of a melting point of a solder layer is prevented and a defect of a mounted semiconductor device is reduced and which has high bonding strength and to provide a manufacturing method of the sub-mount. <P>SOLUTION: The sub-mount is provided with a sub-mount substrate 1, an electrode layer 2 formed on the sub-mount substrate and a solder layer 3 formed on the sub-mount substrate. The solder layer 3 is embedded in a window part 2A of the electrode layer, an outer peripheral part of the solder layer 3 is connected with the electrode layer 2 and the sub-mount 10 is constituted. The solder layer 3 has an overlap part 3A connected to an upper face 2A of the electrode layer. The rise of the melting point due to a change of a composition of the solder layer 3 is prevented without installing the solder barrier layer between the electrode layer 2 and the solder layer 3. The solder layer 3 and the semiconductor device can be bonded with high bonding strength, and the inexpensive sub-mount 10 can be supplied. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007095715(A) 申请公布日期 2007.04.12
申请号 JP20050278958 申请日期 2005.09.26
申请人 DOWA HOLDINGS CO LTD 发明人 NAKANO MASAYUKI;OSHIKA YOSHIKAZU
分类号 H01L21/52;H01L23/12 主分类号 H01L21/52
代理机构 代理人
主权项
地址