| 摘要 |
PROBLEM TO BE SOLVED: To provide a data input device of a semiconductor memory device capable of realizing an increase in the number of bits even in a narrow area when the number of prefetch bits is increased. SOLUTION: The data input device of the semiconductor memory device for prefetching N bits includes a control signal generation means for receiving clocks as a data strobe signal with which external data is synchronized and as the driving signal of the semiconductor memory device to generate a plurality of control signals, and an a synchronizing means for outputting internal data received by 1-bit units as aligned data of N-row form after the processes of aligning the internal data in a parallel form are carried out three times or more. N is a constant of 2 or more. COPYRIGHT: (C)2007,JPO&INPIT
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