发明名称 SEMICONDUCTOR DEVICE
摘要 A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.
申请公布号 KR20070039386(A) 申请公布日期 2007.04.11
申请号 KR20060018716 申请日期 2006.02.27
申请人 FUJITSU LIMITED 发明人 KIKUCHI HIDEAKI;NAGAI KOUICHI
分类号 H01L27/105;H01L27/04 主分类号 H01L27/105
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