发明名称 |
A THIN FILM TRANSISTOR AND A FLAT PANEL DISPLAY COMPRISING THE SAME |
摘要 |
<p>A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.</p> |
申请公布号 |
KR100708721(B1) |
申请公布日期 |
2007.04.11 |
申请号 |
KR20050099353 |
申请日期 |
2005.10.20 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
AHN, TAEK;SUH, MIN CHUL;PARK, JIN SEONG;LEE, SEOK JONG;SHIN, JUNG HAN |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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