发明名称 A THIN FILM TRANSISTOR AND A FLAT PANEL DISPLAY COMPRISING THE SAME
摘要 <p>A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.</p>
申请公布号 KR100708721(B1) 申请公布日期 2007.04.11
申请号 KR20050099353 申请日期 2005.10.20
申请人 SAMSUNG SDI CO., LTD. 发明人 AHN, TAEK;SUH, MIN CHUL;PARK, JIN SEONG;LEE, SEOK JONG;SHIN, JUNG HAN
分类号 H01L29/786 主分类号 H01L29/786
代理机构 代理人
主权项
地址