SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED RESPONSE MARGIN IN REDUNDANCY FLAG SIGNAL AND REDUNDANCY OPERATING METHOD USING THE SAME,申请号KR20050093195-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED RESPONSE MARGIN IN REDUNDANCY FLAG SIGNAL AND REDUNDANCY OPERATING METHOD USING THE SAME
摘要
申请公布号	KR20070038188(A)	申请公布日期	2007.04.10
申请号	KR20050093195	申请日期	2005.10.05
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	CHAE, DONG HYUK;LIM, YOUNG HO
分类号	G11C29/00	主分类号	G11C29/00
代理机构		代理人
主权项
地址

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