发明名称 Self gating photosurface
摘要 A semiconductor surface is provided comprising a plurality of light sensitive pixels wherein each pixel of the plurality of pixels comprises an electronic circuit formed on or in the semiconductor surface, the circuit comprising: a photosensor that generates a signal responsive to light incident thereon at an output thereof; and circuitry that provides a signal responsive to a time lapse between a first time responsive to said signal and a reference time. There is also provided a 3D camera incorporating the semiconductor surface.
申请公布号 US7202898(B1) 申请公布日期 2007.04.10
申请号 US19980868405 申请日期 1998.12.16
申请人 3DV SYSTEMS LTD. 发明人 BRAUN ORI J.;IDDAN GAVRIEL J.;YAHAV GIORA
分类号 G01B11/24;H04N5/335;G01C3/06;G01C3/08;G01N21/86;G01S17/10;G02B7/32;G06T1/00;H01L31/08;H01L31/09 主分类号 G01B11/24
代理机构 代理人
主权项
地址