发明名称 |
Method of forming a diffusion barrier |
摘要 |
A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
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申请公布号 |
US7202167(B2) |
申请公布日期 |
2007.04.10 |
申请号 |
US20040946310 |
申请日期 |
2004.09.22 |
申请人 |
AVIZA TECHNOLOGY LIMITED |
发明人 |
BEEKMANN KNUT;GILES KATHRINE |
分类号 |
H01L21/44;C23C16/32;C23C16/36;C23C16/56;H01L21/314;H01L21/768;H01L23/532;H01L29/40 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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