发明名称 Method of forming a diffusion barrier
摘要 A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
申请公布号 US7202167(B2) 申请公布日期 2007.04.10
申请号 US20040946310 申请日期 2004.09.22
申请人 AVIZA TECHNOLOGY LIMITED 发明人 BEEKMANN KNUT;GILES KATHRINE
分类号 H01L21/44;C23C16/32;C23C16/36;C23C16/56;H01L21/314;H01L21/768;H01L23/532;H01L29/40 主分类号 H01L21/44
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