| 发明名称 |
Semiconductor device including two transistors and capacitive part |
| 摘要 |
An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconductor film and is highly reliable.
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| 申请公布号 |
US7202499(B2) |
申请公布日期 |
2007.04.10 |
| 申请号 |
US20040946466 |
申请日期 |
2004.09.21 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAJIMA SETSUO |
| 分类号 |
H01L29/10;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/49;H01L29/786 |
主分类号 |
H01L29/10 |
| 代理机构 |
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