发明名称 |
SILVER SELENIDE FILM STOICHIOMETRY AND MORPHOLOGY CONTROL IN SPUTTER DEPOSITION |
摘要 |
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr. |
申请公布号 |
KR20070038178(A) |
申请公布日期 |
2007.04.09 |
申请号 |
KR20077006178 |
申请日期 |
2007.03.16 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LI JIUTAO;HAMPTON KEITH;MCTEER ALLEN |
分类号 |
C23C14/34;C23C14/00;C23C14/06;C23C14/54;C30B23/02;G11C11/34;H01L21/203 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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