| 摘要 |
A method of forming a wiring in a thin-film transistor includes a step of providing a bank having a groove defined thereon, a step of placing a liquid material in a wiring formation area of the by depositing droplets of the liquid material, and a step of placing the liquid material in a secondary area. The groove has the wiring formation area and the secondary area that are contiguously connected with each other. The liquid material contains a structural material for the wiring. The per unit amount of the liquid material placed in the secondary area is smaller than the per unit amount of the liquid material deposited in the wiring formation area. |
