发明名称 |
METHOD FOR DESIGNING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide mask designing techniques capable of shortening the increased OPC (Optical Proximity Correction) processing time, shortening the manufacture TAT (Turn Around Time) of a semiconductor device, thereby reducing cost. <P>SOLUTION: A cell library pattern constituting a basic configuration of a semiconductor circuit pattern is preliminarily subjected to an OPC processing for the layout of a single pattern, and the processed cell library pattern is used to produce a semiconductor chip. A plurality of cell libraries are laid to design a mask pattern and the correction amount by the OPC applied to the cell library is changed by considering the influences of cell library patterns laid in the periphery. Further, a group of cells in the identical layout of the objective cell as well as peripheral cells is extracted and registered as a cell set, so that OPC on identical cell sets is carried out not by repeating computation but by copying. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007086587(A) |
申请公布日期 |
2007.04.05 |
申请号 |
JP20050277332 |
申请日期 |
2005.09.26 |
申请人 |
RENESAS TECHNOLOGY CORP;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
TANAKA TOSHIHIKO;SUGA OSAMU;TERASAWA TSUNEO;HIGUCHI TETSUYA;SAKANASHI HIDENORI;NOZATO HIROKAZU;MATSUNAWA TETSUAKI |
分类号 |
G03F1/36;G03F1/68;G03F1/70;G06F17/50 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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