发明名称 METHOD FOR DESIGNING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide mask designing techniques capable of shortening the increased OPC (Optical Proximity Correction) processing time, shortening the manufacture TAT (Turn Around Time) of a semiconductor device, thereby reducing cost. <P>SOLUTION: A cell library pattern constituting a basic configuration of a semiconductor circuit pattern is preliminarily subjected to an OPC processing for the layout of a single pattern, and the processed cell library pattern is used to produce a semiconductor chip. A plurality of cell libraries are laid to design a mask pattern and the correction amount by the OPC applied to the cell library is changed by considering the influences of cell library patterns laid in the periphery. Further, a group of cells in the identical layout of the objective cell as well as peripheral cells is extracted and registered as a cell set, so that OPC on identical cell sets is carried out not by repeating computation but by copying. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007086587(A) 申请公布日期 2007.04.05
申请号 JP20050277332 申请日期 2005.09.26
申请人 RENESAS TECHNOLOGY CORP;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 TANAKA TOSHIHIKO;SUGA OSAMU;TERASAWA TSUNEO;HIGUCHI TETSUYA;SAKANASHI HIDENORI;NOZATO HIROKAZU;MATSUNAWA TETSUAKI
分类号 G03F1/36;G03F1/68;G03F1/70;G06F17/50 主分类号 G03F1/36
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