发明名称 |
CMOS inverter cell |
摘要 |
A CMOS inverter cell having a small horizontal length which is reduced by substituting metal lines for supplying data signals to gates with a connection pattern which is mounted in one end of a supply voltage area of the CMOS inverter cell and is made of the same material as the gate. Data is supplied to the gates through at least one side of the CMOS inverter cell. A single gate pattern or a plurality of different gate patterns may be used.
|
申请公布号 |
US2007075368(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20060503819 |
申请日期 |
2006.08.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON HYUK-JOON;SHIN SANG-WOONG |
分类号 |
H01L27/12;H01L23/48;H01L23/52;H01L27/01;H01L29/40;H01L31/0392 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|