Phase change memory device and method of forming the same

摘要

A PRAM and method of forming the same are disclosed. In various embodiments, the PRAM includes a lower insulation layer formed on a semiconductor substrate, a phase change material pattern formed on the lower insulation layer and a heating electrode contacting the phase change material pattern. The heating electrode can be formed of a material having a positive temperature coefficient such that specific resistance of the material increases as a function of temperature.