| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive thin-film transistor wherein a transistor has less turn-off current and less variance in turn-on current. SOLUTION: The thin-film transistor is comprised of a gate electrode 2, a source electrode 5, a drain electrode 6, and a channel part. In the channel, a semiconductor layer 4 for flowing current exists in an isolated area. In the semiconductor layer 4, droplets are temporally dispersed in the diagonally crossing direction to the channel direction of the transistor, and they are temporally and continuously formed in the parallel direction to the channel direction of the transistor. COPYRIGHT: (C)2007,JPO&INPIT |
