SEMICONDUCTOR DEVICE, ITS FABRICATION METHOD, AND FILM FABRICATION METHOD

摘要

A semiconductor device comprises a first substrate (semiconductor chip 20), an anisotropic conducting film (22), and a second substrate (semiconductor chip). The anisotropic conducting film (22) is provided on the first substrate and has a wiring pattern (24) having at least a conductive portion through the front and back. The second substrate is provided on the anisotropic conducting film (22) and is electrically connected through the wiring pattern (24) of the anisotropic conducting film (22) to the first substrate. A fabrication method of the semiconductor device and a film of the semiconductor device are also disclosed. According to the semiconductor device, its fabrication method, and film fabrication method, it is possible to reduce the manufacturing cost for electrically connecting different portions of the upper and lower substrates.