| 摘要 |
PROBLEM TO BE SOLVED: To prevent a substrate from being shaved through oxidization by allowing a silicon substrate not to be oxidized when removing a photosensitive resin used for pattern formation of an ion implantation area. SOLUTION: This method includes a step wherein a transistor gate electrode 101 is formed in a semiconductor substrate 103, and an insulating film 104 is stacked on the semiconductor substrate; a step to form a pattern for an ion implantation area on the insulating film 104 by using a photosensitive resin 105, a step to form a pattern for the insulating film by using chemicals to remove the insulating film according to the pattern of the photosensitive resin; a step to use chemicals to remove the photosensitive resin on the pattern of the insulating film; and a step to conduct ion implantation on the semiconductor substrate where the photosensitive resin is removed. Thus, the photosensitive resin can be removed without using oxygen plasma, so that the oxidation of the substrate due to oxygen plasma and the quantity of shaving of substrate accompanied therewith can be suppressed. COPYRIGHT: (C)2007,JPO&INPIT
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