| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a polycrystal of group III-V compound semiconductor in which homogenization of the element composition can be achieved. SOLUTION: In the method for producing a polycrystal of group III-V compound semiconductor, a group III raw material and a group V raw material are separately disposed in a sealed tube followed by heating the whole sealed tube, wherein a part of a region in the group III raw material is heated at a higher temperature than the other part (hereinafter, this region is referred to as a high temperature heating part), and the high temperature heating part is moved in the group III raw material to allow a raw material gas generated from the group V raw material to react with the group III raw material, thereby converting the group III raw material to the polycrystal of group III-V compound semiconductor. The high temperature heating part of the group III raw material is moved from one end of the group III raw material to the other end thereof, and then the moving direction is reversed for moving it in the direction to the other end again. COPYRIGHT: (C)2007,JPO&INPIT
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