| 摘要 |
<P>PROBLEM TO BE SOLVED: To implement high pressure polishing and highly precise low pressure polishing in the same polishing apparatus. <P>SOLUTION: A CMP (chemical mechanical polishing) apparatus comprises a head 103 for holding a wafer 100, a cylinder 104 for applying pressure to the wafer 100, on which a head 103 is mounted, and an air line 105 connected to the cylinder 104. The air line 105 comprises a high pressure air line 105a for producing first polishing pressure in the cylinder 104, and a low pressure air line 105b for producing second polishing pressure smaller than the first polishing pressure in the cylinder 104. <P>COPYRIGHT: (C)2007,JPO&INPIT |
