| 摘要 |
A photoresist trimming process is described. An etcher equipped with an etching chamber, a wafer holder, a TCP source and a TCP window is provided. After plasma is generated in the etching chamber, the etching chamber is heated without a wafer therein, and the temperature at the TCP window is monitored simultaneously. It is started, at any time after the temperature at the TCP window reaches a predetermined one, to treat wafers with photoresist layers to be trimmed thereon through the etching chamber.
|
