| 发明名称 |
Method of forming a self-aligned transistor and structure therefor |
| 摘要 |
In one embodiment, a transistor is formed to use two conductors to make electrical connection to one of the active regions of the transistor.
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| 申请公布号 |
US2007075399(A1) |
申请公布日期 |
2007.04.05 |
| 申请号 |
US20050238868 |
申请日期 |
2005.09.30 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. |
发明人 |
GRIVNA GORDON M. |
| 分类号 |
H01L27/082 |
主分类号 |
H01L27/082 |
| 代理机构 |
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