| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a light emitting layer with a multiple quantum well of InGaN (well layer)/AlInGaN (barrier layer), in which a quantum well is deep and which can accumulate multiple electrons, and to install an electron stopper layer 15 corresponding to the well in a semiconductor light emitting element where an n-type nitride semiconductor layer, the light emitting layer (active layer) and a p-type nitride semiconductor layer are sequentially laminated on a substrate. <P>SOLUTION: Barrier layers 14d, 14e, 14f and 14g of the light emitting layer 14 are formed of an Al<SB>0.3</SB>In<SB>0.12</SB>Ga<SB>0.58</SB>N layer, well layers 14a, 14b and 14c are formed of a In<SB>0.15</SB>Ga<SB>0.85</SB>N layer, and an electron blocking layer 15 is formed of an Al<SB>0.4</SB>In<SB>0.1</SB>Ga<SB>0.5</SB>N layer. The electron block layer 15 can be formed at a temperature which is remarkably lower than a case when it is formed of AlGaN. A deposition temperature is brought close to the well layers 14a, 14b and 14c formed of InGaN, sufficient film quality can be obtained and emission efficiency can be improved much more. <P>COPYRIGHT: (C)2007,JPO&INPIT |
