| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor device capable of cutting a wafer into chips easily when manufacturing a nitride semiconductor device, such as LDs, LEDs, and transistors using a nitride semiconductor, and capable of forming a resonator end face due to cleavage especially when forming the LDs, to provide a nitride semiconductor light-emitting device obtained by the manufacturing method of the nitride semiconductor device. <P>SOLUTION: At least one portion of a line A to be cut, where a wafer 10 in which a nitride semiconductor lamination section 6 is formed on a GaN-based substrate 1 is cut into chips, is focused at fixed depth (d) in the GaN-based substrate 1 from the other surface side of the wafer 10, and laser beams LB with electric field strength for causing the absorption of multiphotons are applied with a wavelength that is longer than the band gap wavelength of the GaN-based substrate 1, thus forming a trace of work 11 by laser beams inside the GaN-based substrate 1. Then, a shock is given to the wafer 10, thus cutting the wafer 10 along a cut starting point 12 formed near the trace of work 11. <P>COPYRIGHT: (C)2007,JPO&INPIT |
