| 摘要 |
A method of fabricating a semiconductor device having a fully silicide gate comprises: forming a gate insulation film on a substrate; forming a patterned poly-silicon gate and an insulation layer on the gate insulation film; forming side wall spacers on both sides of the patterned poly-silicon gate; forming source/drain regions on the substrate at both sides of the poly-silicon gate having the side wall spacers; forming a silicide layer on the source/drain regions; forming an insulation film on the entire surface of the substrate; polishing the substrate to expose a top surface of the poly-silicon gate; amorphizing the exposed poly-silicon gate; and transforming the amorphized poly-silicon gate into a fully silicide gate.
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