CHRGE TRAP TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING THREE-LEVEL MEMORY CELLS AND OPERATING METHOD THEREFOR,申请号KR20050071844-传众专利搜索

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发明名称	CHRGE TRAP TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING THREE-LEVEL MEMORY CELLS AND OPERATING METHOD THEREFOR
摘要
申请公布号	KR100704033(B1)	申请公布日期	2007.04.04
申请号	KR20050071844	申请日期	2005.08.05
申请人		发明人
分类号	G11C16/06;G11C16/04	主分类号	G11C16/06
代理机构		代理人
主权项
地址

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