发明名称 Substrate processing method
摘要 A substrate processing method includes: performing an etching process to form a predetermined pattern on an etching-target film disposed on a substrate; denaturing a substance remaining after the etching process to be soluble in a predetermined liquid; then, performing a silylation process on a surface of the etching-target film having the pattern formed thereon; and then, supplying the predetermined liquid to dissolve and remove the denatured substance.
申请公布号 EP1770765(A2) 申请公布日期 2007.04.04
申请号 EP20060019564 申请日期 2006.09.19
申请人 TOKYO ELECTRON LTD. 发明人 FUJII, YASUSHI;TOSHIMA, TAKAYUKI;ORII, TAKEHIKO
分类号 H01L21/02;H01L21/3105;H01L21/311;H01L21/67;H01L21/768 主分类号 H01L21/02
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