发明名称 |
Substrate processing method |
摘要 |
A substrate processing method includes: performing an etching process to form a predetermined pattern on an etching-target film disposed on a substrate; denaturing a substance remaining after the etching process to be soluble in a predetermined liquid; then, performing a silylation process on a surface of the etching-target film having the pattern formed thereon; and then, supplying the predetermined liquid to dissolve and remove the denatured substance.
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申请公布号 |
EP1770765(A2) |
申请公布日期 |
2007.04.04 |
申请号 |
EP20060019564 |
申请日期 |
2006.09.19 |
申请人 |
TOKYO ELECTRON LTD. |
发明人 |
FUJII, YASUSHI;TOSHIMA, TAKAYUKI;ORII, TAKEHIKO |
分类号 |
H01L21/02;H01L21/3105;H01L21/311;H01L21/67;H01L21/768 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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