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发明名称
PHOTORESIST POLYMER OF IMMERSION LITHOGRAPHY AND ITS PREPARATION METHOD, AND PHOTORESIST COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE PATTERN USING THE PHOTORESIST COMPOSITION
摘要
申请公布号
KR20070037343(A)
申请公布日期
2007.04.04
申请号
KR20060094247
申请日期
2006.09.27
申请人
CHEMAX CO., LTD.
发明人
KIM, SEONG JU
分类号
H01L21/027
主分类号
H01L21/027
代理机构
代理人
主权项
地址
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