摘要 |
A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on a substrate, and a group of stacked semiconductor layers including a first semiconductor layer made of a group-III nitride, preferably GaN, a second semiconductor layer made of AlN and a third semiconductor layer made of a group-III nitride containing at least Al, preferably Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N where x>=0.2. The semiconductor device suppresses the reduction in electron mobility resulting from lattice defects and crystal lattice randomness. This achieves a HEMT device having a sheet carrier density of not less than 1x10<SUP>13</SUP>/cm<SUP>2 </SUP>and an electron mobility of not less than 20000 cm<SUP>2</SUP>/V.s at a temperature of 15 K.
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