| 发明名称 |
Pecvd silicon oxide thin film deposition |
| 摘要 |
A method of depositing a gate dielectric layer for a thin film transistor is provided. The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.
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| 申请公布号 |
US7199061(B2) |
申请公布日期 |
2007.04.03 |
| 申请号 |
US20030420417 |
申请日期 |
2003.04.21 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHOI SOO YOUNG;PARK BEOM SOO;SHANG QUANYUAN |
| 分类号 |
H01L21/469;H01L21/28;H01L21/31;H01L21/316;H01L21/336;H01L29/49 |
主分类号 |
H01L21/469 |
| 代理机构 |
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