| 发明名称 |
Method of fabricating a combined fully-depleted silicon-on-insulator (FD-SOI) and partially-depleted silicon-on-insulator (PD-SOI) devices |
| 摘要 |
A method ( 100 ) of forming fully-depleted ( 90 ) and partially-depleted ( 92 ) silicon-on-insulator (SOI) devices on a single die in an integrated circuit device ( 2 ) is disclosed using SOI starting material ( 4, 6, 8 ) and a selective epitaxial growth process ( 110 ).
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| 申请公布号 |
US7198993(B2) |
申请公布日期 |
2007.04.03 |
| 申请号 |
US20040010849 |
申请日期 |
2004.12.13 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TIGELAAR HOWARD L.;BARNA GABRIEL G.;FAYNOT OLIVIER ALAIN |
| 分类号 |
H01L21/84;H01L27/12 |
主分类号 |
H01L21/84 |
| 代理机构 |
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