SEMICONDUCTOR MEMORY HAVING CHARGE TRAPPING MEMORY CELLS AND FABRICATION METHOD,申请号KR20057010527-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY HAVING CHARGE TRAPPING MEMORY CELLS AND FABRICATION METHOD
摘要
申请公布号	KR100703252(B1)	申请公布日期	2007.04.03
申请号	KR20057010527	申请日期	2005.06.10
申请人		发明人
分类号	H01L27/115;H01L21/8246	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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