| 摘要 |
A semiconductor device is provided to obtain a relatively large capacity by using a micro battery including a first current collector with a plurality of through holes. A semiconductor device includes a DRAM chip(60) with bonding pads, a frame, a metal line, an encapsulant and a micro battery. The DRAM chip is attached to the frame(51). The frame has external connection terminals corresponding to the bonding pads of the DRAM chip. The metal line is used for connecting electrically the bonding pads with the external connection terminals. The encapsulant(59) is used for covering the bonding pads and the metal line. The micro battery(10) is installed on the DRAM chip to supply a power source to the DRAM chip. The micro battery is composed of a first current collector with a plurality of through holes, a first active material layer for covering selectively the first current collector, a second active material layer opposite to the first active material layer, and an electrolyte layer between the first and the second active material layers. |
