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发明名称
Method for manufacturing a recessed gate structure in semiconductor device using damascene process
摘要
申请公布号
KR100702123(B1)
申请公布日期
2007.03.30
申请号
KR20050010149
申请日期
2005.02.03
申请人
发明人
分类号
H01L29/78;H01L21/336
主分类号
H01L29/78
代理机构
代理人
主权项
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