| 摘要 |
<p>Disclosed is a selective plasma processing method performed in a plasma processing apparatus, wherein an oxygen-containing plasma is caused to act on an object to be processed having silicon and a silicon nitride layer on the surface thereof, thereby selectively oxidizing the silicon. In this selective plasma processing method, the ratio of the thickness of a silicon oxynitride film formed in the silicon nitride layer relative to the thickness of the thus-formed silicon oxide film is controlled to 20% or less.</p> |
