| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device whose COD (optical damage) level is high. <P>SOLUTION: This nitride semiconductor laser device forms a window layer 27 on the end face of a nitride semiconductor laser device 10 not only to prevent heat generation caused by laser beam absorption but also to improve the COD level. At this time, the concentration of P (phosphorus) is controlled to be lower than 1×10<SP>16</SP>atomicity cm<SP>-3</SP>in an interface with the window layer 27 of the nitride semiconductor laser device 10. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
